IXFK 120N25
IXFX 120N25
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min.
typ.
max.
PLUS 247 TM Outline
g fs
V DS = 10 V; I D = 0.5 I D25
Note 1
62
85
S
C iss
9400
pF
C oss
C rss
t d(on)
t r
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
1730
550
35
38
pF
pF
ns
ns
t d(off)
t f
R G = 1.5 ? (External),
175
35
ns
ns
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Q g(on)
400
nC
Dim.
Millimeter
Inches
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
70
155
nC
nC
A
A 1
Min. Max.
4.83 5.21
2.29 2.54
Min. Max.
.190 .205
.090 .100
A 2
1.91 2.16
.075 .085
R thJC
R thCK
0.15
0.22
K/W
K/W
b
b 1
b 2
1.14 1.40
1.91 2.13
2.92 3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61 0.80
20.80 21.34
15.75 16.13
.024 .031
.819 .840
.620 .635
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
e
L
L1
Q
R
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
I S
I SM
V GS = 0 V
Repetitive;
120
480
A
A
TO-264 AA Outline
pulse width limited by T JM
V SD
t rr
Q RM
I RM
I F = I S , V GS = 0 V, Note 1
I F = 30A,-di/dt = 100 A/ μ s, V R = 100 V
0.8
8
1.5
250
V
ns
μ C
A
Note: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
相关PDF资料
IXFK140N20P MOSFET N-CH 200V 140A TO-264
IXFK140N30P MOSFET N-CH 300V 140A TO-264
IXFK150N15P MOSFET N-CH 150V 150A TO-264
IXFK150N15 MOSFET N-CH 150V 150A TO-264
IXFK170N10P MOSFET N-CH 100V 170A TO-264
IXFK170N10 MOSFET N-CH 100V 170A TO-264AA
IXFK180N085 MOSFET N-CH 85V 180A TO-264AA
IXFK180N10 MOSFET N-CH 100V 180A TO-264AA
相关代理商/技术参数
IXFK120N25P 功能描述:MOSFET 120 Amps 250V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK120N30P3 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK120N30T 功能描述:MOSFET 120A 300V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK140N20P 功能描述:MOSFET 140 Amps 200V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK140N25T 功能描述:MOSFET TRENCH HIPERFET PWR MOSFET 250V 140A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK140N30P 功能描述:MOSFET 140 Amps 300V 0.024 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK150N10 功能描述:MOSFET 150 Amps 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK150N15 功能描述:MOSFET 150 Amps 150V 0.0125 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube